Focused Ion Beam/Scanning Electron Microscope TESCAN LYRA3

Guarantor

Tomáš Šamořil

Description

SEM/FIB is a type of microscope where a focused electron/ion beam is scanned over the sample to generate an image of the surface or to modify it with nanometric resolution (usually better than 10 nm). The image is formed by detecting secondary and backscattered electrons emitted from the impact place of particle beam. The Gas Injection System (GIS) provides a gas inlet for gaseous precursors, thus allowing deposition and enhanced or selective etching on the sample surface using advanced surface chemistry. The microscope is equipped with two closed loop nanomanipulators (optionally two more can be installed), which allows measurement of 2-probe or 4-probe current-voltage characteristics. The tool is equipped with Electron Dispersive X-Ray spectroscopy analyser (EDX) for elemental analysis. Applications include positive/negative lithography, sample imaging and modification, electrical measurements and basic chemical and elemental analysis.

Focused Ion Beam/Scanning Electron Microscope TESCAN LYRA3

Features

Scanning Electron Microscope with Schottky cathode
Focused Ion Beam column with Ga Liquid – Metal Ion Source with nanometric resolution
Gas Injection System with inlets for up to 5 precursors for deposition and etching of materials
Electron Dispersive X-ray spectroscopy for chemical and elemental analysis
Two fixed closed loop nanomanipulators + additional two sample stage nanomanipulators for electrical measurements
Ready for Transmission Electron Microscopy sample preparation
Electron and Ion Beam Lithography software (milling, etching, deposition)
Integrated controlling software
Active antivibration suspension system
Decontaminator/plasma cleaner

Scanning Electron Microscope (SEM)

Tescan LYRA 3	FEG
Accelerating voltage	200 V – 30 kV, 50 V to 30 kV in Beam Deceleration Mode (BDM)
Probe current	2 pA – 200 nA
Detectors / Resolution	Secondary Electrons (SE) / 1.2 nm at 30 kV/ 2.5 nm at 3 kV
	SE ( BDM) / 1.5 nm at 3 kV
	In-Beam BSE / 2.0 nm at 15 kV
	Backscattered Secondary Electrons (BSE) / 2 nm at 30 kV
	Transmitted Electrons(TE)
	Electron Beam Induced Current (EBIC)
Chamber vacuum	< 9e-3 Pa (< 5e-4 Pa reachable)
Specimen Stage Movements	X = 130 mm (–50 mm to +80 mm)
	Y = 130 mm (–65 mm to +65 mm)
	Z = 100 mm
	Rotation: 360° continuous
	Tilt: –30° to +90°

Focused Ion Beam (FIB)

Ion Column	Canion
Ion Gun	Ga Liquid Metal Ion Source
Accelerating voltage	0.5 kV to 30 kV
Probe current	1 pA to 40 nA
SEM-FIB Coincidence at	WD 9 mm for SEM – WD 12 mm for FIB
SEM-FIB angle	55°

Gas Injection System (GIS)

Number of GIS channels installed	5
Type of precursors available	Insulator (SiOx), Water, Fluorine, Platinum, Tungsten

Energy Dispersive X-ray (EDX) Detector

Detector type	Bruker XFlash 5010
Energy resolution	≤ 129 eV @ MnKα
	59 eV @ FKα
	52 eV @ CKα