chemical vapour deposition system going to very high deposition temperatures dedicated to the deposition of carbon nanomaterials, possibilities of plasma enhancement by discharges of different frequency (including their regular switching)
RF CCP 13.56 MHz plasma source 600 W | |
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high frequency 50–400 kHz plasma source 300 WRF substrate biasing | |
grounded substrate | |
sample size up to 6’’ | |
loadlock | |
substrate temperature 50 to 1000 °C | |
gases: | Ar2, CH4, C2H2, H2 |
Materials | deposition of carbon nanotubes and graphene |