Wire bonding is a micro-welding technique for electrical interconnection of the sample substrate structures and semiconductor chip thin metallic layers. Contact between the sample surface and pure gold, alloyed aluminum or copper wire is provided by three main methods: ultrasonic, thermocompression and thermosonic bonding. The welding process is realized by wire attached to the substrate by bonding tool at the end of ultrasonic transducer, which is getting closer to certain distance to the sample surface. To achieve enhanced welding capability, sample is heated up to a certain temperature, for most processes being in the range from 20 °C to 250 °C. Attachment techniques defined by bonder tools are performed by wedge-wedge, ball-wedge, ribbon and bump bonding class.
Thermosonic wire bonder wor wedge and ball bonding
Wire Bonding methods | Ultrasonic |
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Thermocompression |
Thermosonic |
Ultrasonic transducer | 62 kHz, up zo 2W power |
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Sample size | up to 100 mm x 150 mm |
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Sample (chip) holder – chuck | heated up to 250 °C |
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Wire material | Gold |
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AlSi1 |
Wire diameters | from 17 um up to 75 um |
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Wire option | ribbon up to 25 um x 250 um |
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Loop shaping | motorized Y and Z axis with 9 intersection points |
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Software | possibility to store up to 100 recipes |
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Advanced
Ultrasonic power | 0 – 2 000 mWatt output |
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Bond time | 0 – 10 s |
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Bond force | 0 – 1 500 mN |
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Bonding tool | diameter 1,58 mm, length 19 mm |
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Motorized wire spool | siamater 50,8 mm |
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Wire termination | bond head tear / clamp tear |
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Wire feed angel | 90 ° |
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Clamp movement | motorized, Up / Down |
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Motor speed (axis Y, Z) | 0 – 100 % |
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